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Original Articles

Atomic structure of dislocations in silicon, germanium and diamond

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Pages 873-891 | Received 11 Jul 1989, Accepted 22 Aug 1989, Published online: 13 Sep 2006

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Read on this site (10)

J. Narayan. (2021) Discovery of double helix of screw dislocations: a perspective. Materials Research Letters 9:11, pages 453-457.
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Z. C. Li, L. Liu, X. Wu, L. L. He & Y. B. Xu. (2003) Structure at the crack tip in GaAs. Philosophical Magazine Letters 83:4, pages 217-221.
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S. Senkader, K. Jurkschat, D. Gambaro, R.J. Falster & P.R. Wilshaw. (2001) On the locking of dislocations by oxygen in silicon. Philosophical Magazine A 81:3, pages 759-775.
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S. Oktyabrsky & J. Narayan. (1995) New mechanism of formation of stacking faults in Gd(001)Si heterostructures. Philosophical Magazine A 72:2, pages 305-314.
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M. Ichimuraa & J. Narayan. (1995) Atomistic study of dislocation nucleation in Ge/(001)Si heterostructuses. Philosophical Magazine A 72:2, pages 281-295.
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V. Vitek, G. Gutekunst, J. Mayer & M. Rühle. (1995) Atomic structure of misfit dislocations in metal‐ceramic interfaces. Philosophical Magazine A 71:6, pages 1219-1239.
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S. Oktyabrsky, H. Wu, R.D. Vispute & J. Narayan. (1995) Misfit dislocations in low-temperature grown Ge/Si heterostructures. Philosophical Magazine A 71:3, pages 537-551.
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Robert Hull & JohnC. Bean. (1992) Misfit dislocations in lattice-mismatched epitaxial films. Critical Reviews in Solid State and Materials Sciences 17:6, pages 507-546.
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Articles from other publishers (59)

Derek OlsonChristoph Ortner, Yangshuai WangLei Zhang. (2023) Elastic Far-Field Decay from Dislocations in Multilattices. Multiscale Modeling & Simulation 21:4, pages 1379-1409.
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Kevin-P. Gradwohl, Wolfram Miller, Natasha Dropka & R. Radhakrishnan Sumathi. (2022) Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations. Computational Materials Science 211, pages 111537.
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Jagdish Narayan & Roger Narayan. (2022) Discovery of Double Helix and Impact on Nanoscale to Mesoscale Crystalline Structures. ACS Omega 7:29, pages 25853-25859.
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G. Garcia Vidable, R.I. Gonzalez, F.J. Valencia, N. Amigo, D. Tramontina & E.M. Bringa. (2022) Simulations of plasticity in diamond nanoparticles showing ultrahigh strength. Diamond and Related Materials 126, pages 109109.
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X. W. Zhou & M. E. Foster. (2021) Character angle effects on dissociated dislocation core energy in aluminum. Physical Chemistry Chemical Physics 23:5, pages 3290-3299.
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Anmin Nie, Yeqiang Bu, Junquan Huang, Yecheng Shao, Yizhi Zhang, Wentao Hu, Jiabin Liu, Yanbin Wang, Bo Xu, Zhongyuan Liu, Hongtao Wang, Wei Yang & Yongjun Tian. (2020) Direct Observation of Room-Temperature Dislocation Plasticity in Diamond. Matter 2:5, pages 1222-1232.
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Xiaowang Zhou. (2019) Impact of Molecular Dynamics Simulations on Research and Development of Semiconductor Materials. MRS Advances 4:61-62, pages 3381-3398.
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L. I. Fedina, A. K. Gutakovskii & T. S. Shamirzaev. (2018) On the structure and photoluminescence of dislocations in silicon. Journal of Applied Physics 124:5.
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B.-C. Gallheber, O. Klein, M. Fischer & M. Schreck. (2017) Propagation of threading dislocations in heteroepitaxial diamond films with (111) orientation and their role in the formation of intrinsic stress. Journal of Applied Physics 121:22.
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X. W. Zhou, R. B. Sills, D. K. Ward & R. A. Karnesky. (2017) Atomistic calculations of dislocation core energy in aluminium. Physical Review B 95:5.
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Y.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii & L.V. Sokolov. (2013) Mechanism of induced nucleation of misfit dislocations in the Ge-on-Si(0 0 1) system and its role in the formation of the core structure of edge misfit dislocations. Acta Materialia 61:2, pages 617-621.
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Zhidan Zeng, J. D. Murphy, R. J. Falster, Xiangyang Ma, Deren Yang & P. R. Wilshaw. (2011) The effect of impurity-induced lattice strain and Fermi level position on low temperature oxygen diffusion in silicon. Journal of Applied Physics 109:6.
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J. Kioseoglou, Ph. Komninou & Th. Karakostas. (2008) Interatomic potential calculations of III(Al, In)–N planar defects with a III‐species environment approach. physica status solidi (b) 245:6, pages 1118-1124.
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A.T. BlumenauThomas Frauenheim, Sven Öberg, B. Willems & Gustaaf Van Tendeloo. (2004) Dislocation Structures in Diamond: Density-Functional Based Modelling and High-Resolution Electron Microscopy. Defect and Diffusion Forum 226-228, pages 11-30.
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Antoine Béré & Anna Serra. (2003) Atomic structures of twin boundaries in GaN. Physical Review B 68:3.
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Eberhard Blank. 2003. Thin-Film Diamond I. Thin-Film Diamond I 49 144 .
William S. C. Chang. 2010. RF Photonic Technology in Optical Fiber Links. RF Photonic Technology in Optical Fiber Links 165 202 .
Antoine Béré & Anna Serra. (2002) Structure of [0001] tilt boundaries in GaN obtained by simulation with empirical potentials. Physical Review B 66:8.
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Antoine Béré & Anna Serra. (2002) Atomic structure of dislocation cores in GaN. Physical Review B 65:20.
Crossref
A. T. Blumenau, M. I. Heggie, C. J. Fall, R. Jones & T. Frauenheim. (2002) Dislocations in diamond: Core structures and energies. Physical Review B 65:20.
Crossref
X. Zhang, H. Wang, J. Narayan & C.C. Koch. (2001) Evidence for the formation mechanism of nanoscale microstructures in cryomilled Zn powder. Acta Materialia 49:8, pages 1319-1326.
Crossref
Norihisa OYAMA, Ko OKAJIMA, Eiji OHTA, Kyozaburo TAKEDA, Kenji SHIRAISHI, Hiroshi YAMAGUCHI, Tomonori ITO & Takahisa OHNO. (2001) Relation between the Generation of Misfit Dislocations at InAs/GaAs(110) Heterointerface and the Growth Mode.InAs/GaAs(110)ヘテロ界面におけるミスフイット転位形成と成長モードの関係. Hyomen Kagaku 22:4, pages 238-247.
Crossref
X. Blase, Karin Lin, A. Canning, S. G. Louie & D. C. Chrzan. (2000) Structure and Energy of the Partial Dislocation in Diamond: A Combined Ab Initio and Elasticity Theory Analysis . Physical Review Letters 84:25, pages 5780-5783.
Crossref
A.A Shiryaev, A van Veen, H Schut, A.C Kruseman & O.D Zakharchenko. (2000) Positron beam investigations of natural cubic and coated diamonds. Radiation Physics and Chemistry 58:5-6, pages 625-632.
Crossref
Paolo Politi, Geneviève Grenet, Alain Marty, Anne Ponchet & Jacques Villain. (2000) Instabilities in crystal growth by atomic or molecular beams. Physics Reports 324:5-6, pages 271-404.
Crossref
A Levay, G Möbus, V Vitek, M Rühle & G Tichy. (1999) Structure of misfit dislocations in niobium–sapphire interfaces and strength of interfacial bonding: an atomistic study. Acta Materialia 47:15-16, pages 4143-4152.
Crossref
Yugui Yao, Tsuchiang Wang & Chongyu Wang. (1999) Peierls-Nabarro model of interfacial misfit dislocation: An analytic solution. Physical Review B 59:12, pages 8232-8236.
Crossref
M. Dornheim & H. Teichler. (1999) Atomistic Modeling of Misfit Dislocations for Ge/(001)Si and Ge/(111)Si. physica status solidi (a) 171:1, pages 267-274.
Crossref
João F. Justo, Martin Z. Bazant, Efthimios Kaxiras, V. V. Bulatov & Sidney Yip. (1998) Interatomic potential for silicon defects and disordered phases. Physical Review B 58:5, pages 2539-2550.
Crossref
S. Takeda. (1998) Structure analysis of defects in nanometer space inside a crystal: Creation and agglomeration of point defects in Si and Ge revealed by high-resolution electron microscopy. Microscopy Research and Technique 40:4, pages 313-335.
Crossref
M. Dynna & A. Marty. (1998) The energetics of the relaxation of misfit strain in thin epitaxial films by means of twinning. Acta Materialia 46:4, pages 1087-1101.
Crossref
J. E. Van Nostrand, David G. Cahill, I. Petrov & J. E. Greene. (1998) Morphology and microstructure of tensile-strained SiGe(001) thin epitaxial films. Journal of Applied Physics 83:2, pages 1096-1102.
Crossref
R. Hull. 1998. Germanium Silicon: Physics and Materials. Germanium Silicon: Physics and Materials 101 167 .
Michael Ortiz & Rob Phillips. 1998. Advances in Applied Mechanics Volume 36. Advances in Applied Mechanics Volume 36 1 79 .
Donald L. Woodraska & John A. Jaszczak. (1997) A Monte Carlo simulation method for {111} surfaces of silicon and other diamond-cubic materials. Surface Science 374:1-3, pages 319-332.
Crossref
J. F. Justo, M. Z. Bazant, E. Kaxiras, V. V. Bulatov & S. Yip. (2011) Interatomic Potential for Condensed Phases and Bulk Defects in Silicon. MRS Proceedings 469.
Crossref
T.L. Daulton, D.D. Eisenhour, T.J. Bernatowicz, R.S. Lewis & P.R. Buseck. (1996) Genesis of presolar diamonds: Comparative high-resolution transmission electron microscopy study of meteoritic and terrestrial nano-diamonds. Geochimica et Cosmochimica Acta 60:23, pages 4853-4872.
Crossref
J. L. Vassent, M. Dynna, A. Marty, B. Gilles & G. Patrat. (1996) A study of growth and the relaxation of elastic strain in MgO on Fe(001). Journal of Applied Physics 80:10, pages 5727-5735.
Crossref
M. Ichimura. (1996) Stillinger-Weber potentials for III–V compound semiconductors and their application to the critical thickness calculation for InAs/GaAs. Physica Status Solidi (a) 153:2, pages 431-437.
Crossref
J.P. HIRTH. 1996. Physical Metallurgy. Physical Metallurgy 1831 1875 .
V. Vitek. 1996. Stability of Materials. Stability of Materials 53 97 .
M. Dynna & G.C. Weatherly. (1995) The energetics of the relief of misfit strain in InASyP1−y films grown on 〈100〉 InP substrates by means of three sets of dislocations. Scripta Metallurgica et Materialia 32:10, pages 1565-1571.
Crossref
S. Oktyabrsky & J. Narayan. (2011) Formation of Interfacial Dislocations in Hetero-Epitaxial Layers Grown in Two-Dimensional Mode. MRS Proceedings 399.
Crossref
Donald L. Woodraska, Jason Lacosse & John A. Jaszczak. (2011) Monte Carlo Simulation of Dislocation-Nucleated Etching of Silicon {111} Surfaces. MRS Proceedings 389.
Crossref
M. Lu & C. H. Lee. (1995) A Non-Equilibrium Statistical Thermodynamic Description of Thermo-Viscoelastoplastic Behaviour for a Single Crystal with Dislocations. Journal of Non-Equilibrium Thermodynamics 20:2.
Crossref
V. T. Gillard, W. D. Nix & L. B. Freund. (1994) Role of dislocation blocking in limiting strain relaxation in heteroepitaxial films. Journal of Applied Physics 76:11, pages 7280-7287.
Crossref
Mark Mostoller, M. F. Chisholm & Theodore Kaplan. (1994) Edge-dislocation intersections in diamond cubic crystals. Physical Review B 50:16, pages 12183-12186.
Crossref
G I Leach & R C Merkle. (1994) Crystal Clear: a molecular CAD tool. Nanotechnology 5:3, pages 168-171.
Crossref
Mark Mostoller, M. F. Chisholm & Theodore Kaplan. (1994) New extended point defect structure in diamond cubic crystals. Physical Review Letters 72:10, pages 1494-1497.
Crossref
A.S. Nandedkar. (1993) Atomistic simulation of formation of misfit dislocations if f.c.c. heterostructures. Acta Metallurgica et Materialia 41:12, pages 3455-3462.
Crossref
R Gallego & M Ortiz. (1993) A harmonic/anharmonic energy partition method for lattice statics computations. Modelling and Simulation in Materials Science and Engineering 1:4, pages 417-436.
Crossref
U. Trinczek & H. Teichler. (1993) Line Energies of 30°- and 90°-Partial Dislocations in Silicon and Germanium. Physica Status Solidi (a) 137:2, pages 577-589.
Crossref
Masanori Kohyama & Seiji Takeda. (1992) Atomic structure and energy of the {113} planar interstitial defects in Si. Physical Review B 46:19, pages 12305-12315.
Crossref
D.D. Perovic & D.C. Houghton. (2011) “Barrierless” Misfit Dislocation Nucleation in SiGe/Si Strained Layer Epitaxy. MRS Proceedings 263.
Crossref
S. Sharan & J. Narayan. 1992. Concise Encyclopedia of Semiconducting Materials & Related Technologies. Concise Encyclopedia of Semiconducting Materials & Related Technologies 414 427 .
J Narayan & S Sharan. (1991) Mechanism of formation of 60° and 90° misfit dislocations in semiconductor heterostructures. Materials Science and Engineering: B 10:4, pages 261-267.
Crossref
T. E. Mitchell & O. Unal. (1991) Dislocation arrangements in gaas/ga1−xlnxas multilayers grown on (001), (111) and (112) substrates. Journal of Electronic Materials 20:7, pages 723-734.
Crossref
A. S. Nandedkar, G. R. Srinivasan & C. S. Murthy. (1991) Formation and structure of misfit dislocations. Physical Review B 43:9, pages 7308-7311.
Crossref
S. M. Kanetkar, G. Matera, Xuekang Chen, S. Pramanick, P. Tiwari, J. Narayan, G. Pfeiffer & M. Paesler. (1991) Growth of diamond films on si(100) with and without boron nitride buffer layer. Journal of Electronic Materials 20:2, pages 141-149.
Crossref

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