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Integrated Ferroelectrics
An International Journal
Volume 65, 2004 - Issue 1
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Original Articles

MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr2(Ta1−x,Nbx)2O7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment

ICHIROU TAKAHASHI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
HIROYUKI SAKURAI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
TATSUFUMI ISOGAI Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
KIYOSHI FUNAIWA New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
MASAKI HIRAYAMA New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
AKINOBU TERAMOTO New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
,
SHIGETOSHI SUGAWA Graduate School of Engineering, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
&
TADAHIRO OHMI New Industry Creation Hatchery Center, Tohoku University, Aza-Aoba 10, Aramaki, Aoba-ku, Sendai, Japan
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Pages 29-38 | Received 01 Apr 2004, Accepted 01 May 2004, Published online: 11 Aug 2010

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Ichirou Takahashi, Masaki Hirayama, Yasuyuki Shirai, Akinobu Teramoto, Shigetoshi Sugawa & Tadahiro Ohmi. (2008) 13.56 and 100 MHz Coupled Mode Rf-Sputtering for Ferroelectric Sr (Ta ,Nb )2O (STN) Film Applied to One-Transistor Type Ferroelectric Random Access Memory. Ferroelectrics 368:1, pages 90-95.
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ICHIROU TAKAHASHI, HIROYUKI SAKURAI, TATSUFUMI ISOGAI, AKINOBU TERAMOTO, SHIGETOSHI SUGAWA & TADAHIRO OHMI. (2006) LOW VOLTAGE 3 V OPERATION OF FERROELECTRIC MULTI-LAYER STACK MFIS STRUCTURE DEVICE FORMED BY PLASMA PHYSICAL VAPOR DEPOSITION AND OXYGEN RADICAL TREATMENT. Integrated Ferroelectrics 81:1, pages 47-55.
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