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Integrated Ferroelectrics
An International Journal
Volume 3, 1993 - Issue 3
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Original Articles

Dielectric breakdown in high-ε films for ULSI DRAMs

J. F. Scott Faculty of Applied Science, Royal Melbourne Institute of Technology, Melbourne, Victoria, 3001, Australia
,
B. M. Melnick Dept. of Physics, Univ. of Colorado, Boulder, CO, 80309-0390, USA
,
L. D. McMillan Dept. of Electrical Engineering, Univ. of Colorado, Colorado Springs, CO, 80933-7150, USA
&
C. A. Paz De Araujo Symetrix Corp., Colorado Springs, CO, 80918, USA
Pages 225-243 | Received 10 Sep 1992, Accepted 20 Mar 1993, Published online: 19 Aug 2006

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Dong-Soo Yoon, Jae Sung Roh, Hong Koo Baik & Sung-Man Lee. (2002) Future Direction for a Diffusion Barrier in Future High-Density Volatile and Nonvolatile Memory Devices. Critical Reviews in Solid State and Materials Sciences 27:3-4, pages 143-226.
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I. Stolichnov, A. Tagantsev, N. Setter, S. Okhonin, P. Fazan, J.S. Cross, M. Tsukada, A. Bartic & D. Wouters. (2001) Constant-current study of dielectric breakdown of Pb(Zr,Ti)O3 ferroelectric film capacitors. Integrated Ferroelectrics 32:1-4, pages 45-54.
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Matthew Dawber & J.F. Scott. (2001) Modelling of leakage current in ferroelectric thin film capacitors. Ferroelectrics 260:1, pages 143-148.
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A.J. Hartmann, R.N. Lamb, J.F. Scott, P.N. Johnston, M.E. Bouanani, C.W. Chen & J. Robertson. (1999) Surface characterisation of strontium-bismuth tantalate (SBT) thin films. Integrated Ferroelectrics 23:1-4, pages 113-126.
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O.K. Tan, X.F. Chen & W.G. Zhu. (1999) Ferroelectric (Ba, Sr)TiO3 thin films for H2 gas detection by sol-gel and RF sputtering. Ferroelectrics 225:1, pages 295-302.
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J.F. Scott, K. Watanabe, A.J. Hartmann & R.N. Lamb. (1999) Device models for PZT/PT, BST/PT, SBT/PT, and SBT/BI ferroelectric memories. Ferroelectrics 225:1, pages 83-90.
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J.F. Scott. (1998) Dielectric breakdown, negative resistivity, depletion widths and the role of Bi in strontium bismuth tantalate (SBT) devices. Integrated Ferroelectrics 19:1-4, pages 85-93.
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V. Joshi, C.P. Dacruz, J.D. Cuchiaro, C.A. Araujo & R. Zuleeg. (1997) Analysis of C-V and I-V data of BST thin films. Integrated Ferroelectrics 14:1-4, pages 133-140.
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Cheol Seong Hwang, Byoung Taek Lee, Soon Oh Park, Jin Won Kim, Hag-Ju Cho, Chang Seok Kang, Hideki Horii, Sang In Lee & Moon Yong Lee. (1996) Interface potential barrier height and leakage current behavior of Pt/(Ba, Sr)TiO3/Pt capacitors fabricated by sputtering process. Integrated Ferroelectrics 13:1-3, pages 157-177.
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J.F. Scott. (1996) Device physics of ferroelectric memories. Ferroelectrics 183:1, pages 51-63.
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A. Schurian & K. Bärner. (1996) Stable suspensions of ferroelectric nm-LiNbO3 — and nm-PbTiO3 — particles in hydrocarbon carrier liquids. Ferroelectrics Letters Section 20:5-6, pages 169-176.
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In Kyeong Yoo, Chang Jung Kim & SeshuB. Desu. (1995) Breakdown mechanisms in PZT thin film capacitors. Integrated Ferroelectrics 11:1-4, pages 269-275.
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V.V. Lemanov, N.V. Zaitseva, S.V. Shtelmakh, A.V. Motorny & V.K. Yarmarkin. (1995) Structure and properties of Sol-Gel PbZrTiO3 thin films. Ferroelectrics 170:1, pages 231-236.
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In Kyeong Yoo. (1995) Degradations in PZT thin film capacitors. Integrated Ferroelectrics 9:1-3, pages 117-123.
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J.F. Scott. (1995) Dielectric breakdown in high-ε films for ulsi DRAMs: III. Leakage current precursors and electrodes. Integrated Ferroelectrics 9:1-3, pages 1-12.
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GuidoW. Dietz & Rainer Waser. (1995) How to analyse relaxation and leakage currents of dielectric thin films: Simulation of voltage-step and voltage-ramp techniques. Integrated Ferroelectrics 8:3-4, pages 317-332.
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V. Joshi, D. Roy & M.L. Mecartney. (1995) Nonlinear conduction in textured and non textured lithium niobate thin films. Integrated Ferroelectrics 6:1-4, pages 321-327.
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Orlando Auciello, KennethD. Gifford, DanielJ. Lichtenwalner, Rovindra Dat, HusamN. Al-Shareef, Kashyap.R. Bellur & AngusI. Kincon. (1995) A review of composition-structure-property relationships for PZT-based heterostructure capacitors. Integrated Ferroelectrics 6:1-4, pages 173-187.
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Roberto Guido, Thomas Mikolajick, Uwe Schroeder & Patrick D. Lomenzo. (2023) Role of Defects in the Breakdown Phenomenon of Al 1– x Sc x N: From Ferroelectric to Filamentary Resistive Switching . Nano Letters 23:15, pages 7213-7220.
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R. Alcala, M. Materano, P. D. Lomenzo, L. Grenouillet, T. Francois, J. Coignus, N. Vaxelaire, C. Carabasse, S. Chevalliez, F. Andrieu, T. Mikolajick & U. Schroeder. (2022) BEOL Integrated Ferroelectric HfO₂-Based Capacitors for FeRAM: Extrapolation of Reliability Performance to Use Conditions. IEEE Journal of the Electron Devices Society 10, pages 907-912.
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Sheng Tong. (2021) Size and temperature effects on dielectric breakdown of ferroelectric films. Journal of Advanced Ceramics 10:1, pages 181-186.
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Deepankar Sri Gyan & Akansha Dwivedi. (2019) Structural and electrical characterization of NaNbO3-PVDF nanocomposites fabricated using cold sintering synthesis route. Journal of Applied Physics 125:2.
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Juan Xie, Hua Hao, Zhonghua Yao, Lin Zhang, Qi Xu, Hanxing Liu & Minghe Cao. (2018) Energy storage properties of low concentration Fe-doped barium strontium titanate thin films. Ceramics International 44:6, pages 5867-5873.
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Jiaheng Wang, Ningning Sun, Yong Li, Qiwei Zhang, Xihong Hao & Xiujian Chou. (2017) Effects of Mn doping on dielectric properties and energy-storage performance of Na0.5Bi0.5TiO3 thick films. Ceramics International 43:10, pages 7804-7809.
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Aditya Chauhan, Satyanarayan Patel, Rahul Vaish & Chris Bowen. (2015) Anti-Ferroelectric Ceramics for High Energy Density Capacitors. Materials 8:12, pages 8009-8031.
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Muhammad Masuduzzaman, Dhanoop Varghese, John A. Rodriguez, Srikanth Krishnan & Muhammad Ashraful Alam. (2014) Observation and Control of Hot Atom Damage in Ferroelectric Devices. IEEE Transactions on Electron Devices 61:10, pages 3490-3498.
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Sheng Tong, Beihai Ma, Manoj Narayanan, Shanshan Liu, Rachel Koritala, Uthamalingam Balachandran & Donglu Shi. (2013) Lead Lanthanum Zirconate Titanate Ceramic Thin Films for Energy Storage. ACS Applied Materials & Interfaces 5:4, pages 1474-1480.
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. 2011. Ferroelectric Dielectrics Integrated on Silicon. Ferroelectric Dielectrics Integrated on Silicon 305 340 .
. 2011. Ferroelectric Dielectrics Integrated on Silicon. Ferroelectric Dielectrics Integrated on Silicon 213 279 .
Beihai Ma, Do-Kyun Kwon, Manoj Narayanan & U (Balu) Balachandran. (2008) Leakage current characteristics and dielectric breakdown of antiferroelectric Pb 0.92 La 0.08 Zr 0.95 Ti 0.05 O 3 film capacitors grown on metal foils . Journal of Physics D: Applied Physics 41:20, pages 205003.
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X. J. Lou, M. Zhang, S. A. T. Redfern & J. F. Scott. (2007) Fatigue as a local phase decomposition: A switching-induced charge-injection model. Physical Review B 75:22.
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Xiaojie Lou, Xiaobing Hu, Ming Zhang, F. D. Morrison, S. A. T. Redfern & J. F. Scott. (2006) Phase separation in lead zirconate titanate and bismuth titanate during electrical shorting and fatigue. Journal of Applied Physics 99:4, pages 044101.
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M. Dawber, K. M. Rabe & J. F. Scott. (2005) Physics of thin-film ferroelectric oxides. Reviews of Modern Physics 77:4, pages 1083-1130.
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Di Wu, Aidong Li & Naiben Ming. (2005) Leakage current characteristics of Pt∕Bi3.25La0.75Ti3O12∕Pt thin-film capacitors. Journal of Applied Physics 97:10.
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E. Bouyssou, R. Jérisian, N. Cézac, P. Leduc, G. Guégan & C. Anceau. (2005) Wafer level reliability and leakage current modeling of PZT capacitors. Materials Science and Engineering: B 118:1-3, pages 28-33.
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In Kyeong Yoo. 2004. Nanoscale Phenomena in Ferroelectric Thin Films. Nanoscale Phenomena in Ferroelectric Thin Films 3 38 .
R. Bouregba, G. Poullain, B. Vilquin & G. Le Rhun. (2003) Asymmetrical leakage currents as a possible origin of the polarization offsets observed in compositionally graded ferroelectric films. Journal of Applied Physics 93:9, pages 5583-5591.
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W. Zhu, O. K. Tan, J. Deng & J. T. Oh. (2011) Preparation, Property, and Mechanism Studies of Amorphous Ferroelectric (Ba, Sr)TiO 3 Thin Films for Novel Metal–ferroelectric–metal Type Hydrogen Gas Sensors . Journal of Materials Research 15:6, pages 1291-1302.
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I. Stolichnov, A. Tagantsev, N. Setter, S. Okhonin, P. Fazan, J. S. Cross & M. Tsukada. (2000) Dielectric breakdown in (Pb,La)(Zr,Ti)O3 ferroelectric thin films with Pt and oxide electrodes. Journal of Applied Physics 87:4, pages 1925-1931.
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James F. ScottJames F. Scott. 2000. Ferroelectric Memories. Ferroelectric Memories 79 94 .
James F. ScottJames F. Scott. 2000. Ferroelectric Memories. Ferroelectric Memories 53 77 .
Cheol Seong Hwang, Mark D. Vaudin & Peter K. Schenck. (2011) Influence of the microstructure of Pt/Si substrates on textured growth of barium titanate thin films prepared by pulsed laser deposition. Journal of Materials Research 13:2, pages 368-375.
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Y. S. Hwang & S. H. Paek. (1995) A study of the properties and interface of lead-zirconate-titanate thin film with substrate temperature. Journal of Materials Science Letters 14:9, pages 640-642.
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J. F. Scott. 1995. Science and Technology of Electroceramic Thin Films. Science and Technology of Electroceramic Thin Films 249 259 .
Orlando Auciello, H. N. Al Shareef, K. D. Gifford, D. J. Lichtenwalner, R. Dat, K. R. Bellur, A. I. Kingon & R. Ramesh. (2011) A Review of Orientation-Microstructure-Property Relationships for PZT / Metal or Metal-Oxide Layered Heterostructures. MRS Proceedings 341.
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In Kyeong Yoo & Seshu Babu Desu. (1994) Breakdown in lead zirconate titanate (PZT) thin film capacitors. Breakdown in lead zirconate titanate (PZT) thin film capacitors.

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