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Integrated Ferroelectrics
An International Journal
Volume 6, 1995 - Issue 1-4
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Original Articles

Study on ferroelectric thin films for application to NDRO non-volatile memories

Yuichi Nakao ROHM CO., LTD., 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615, Japan
,
Takashi Nakamura ROHM CO., LTD., 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615, Japan
,
Akira Kamisawa ROHM CO., LTD., 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615, Japan
&
Hidemi Takasu ROHM CO., LTD., 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto, 615, Japan
Pages 23-34 | Received 16 May 1994, Published online: 19 Aug 2006

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CHOON-HO LEE & SUN-IL KIM. (2004) Electrical Properties of PZT/Mg2TiO4 Thin Films Made by Low Pressure MOCVD. Integrated Ferroelectrics 68:1, pages 37-43.
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Kazumi Kato. (2001) Chemical processing and properties of Sr2(Ta, Nb)2O7 thin films. Integrated Ferroelectrics 34:1-4, pages 93-100.
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Wataru Sakamoto, Daisuke Kawasaki, Toshinobu Yogo & Shin Ichihirano. (2001) Chemical solution processing of sr2(nb,ta)2o7 thin films. Integrated Ferroelectrics 36:1-4, pages 275-284.
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Qin Zou, Harry Ruda, BenG. Yacobi & Mark Farrell. (2001) Dielectric properties of sol-gel derived Pb(Zr0.70Ti0.30)O3/PbTiO3 and Pb(Zr0.70Ti0.30)O3/BaTiO3 multilayer thin films. Ferroelectrics 260:1, pages 137-142.
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Jung-Hoon Yeom & Choon-Ho Lee. (2001) Electrical properties of PZT films and Mg2TiO4 buffer layer for mfmis fet. Ferroelectrics 260:1, pages 81-86.
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Yoshikazu Fujimori, Naoki Izumi, Takashi Nakamura & Akira Kamisawa. (1998) Sr2(Ta, Nb)2O7 ferroelectric thin film for ferroelectric memory FET. Integrated Ferroelectrics 21:1-4, pages 73-82.
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Eisuke Tokumitsu, Toshishige Shimamura & Hiroshi Ishiwara. (1997) Electrical properties of ferroelectric-capacitor-gate si mos transistors using p(l)zt films. Integrated Ferroelectrics 15:1-4, pages 137-144.
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M. Lim & T.S. Kalkur. (1997) Electrical characteristics of PT-bismuth strontium tantalate(BST)-P-SI with zirconium oxide buffer layer. Integrated Ferroelectrics 14:1-4, pages 247-257.
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Choon-Ho Lee, In-Tae Kim & Soon Ja Park. (1996) MOCVD of Pb(Zr Ti1- )O3 thin films on MgTiO3/Si substrates and their electrical properties. Integrated Ferroelectrics 12:2-4, pages 115-123.
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Takashi Nakamura, Yuichi Nakao, Akira Kamisawa & Hidemi Takasu. (1995) Electrical properties of PZT thin films for memory application. Integrated Ferroelectrics 11:1-4, pages 161-170.
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Nahee Park, Hyunkyung Lee, Jeongmin Park, Tuan Khanh Chau, Hojin Kang, Haeyong Kang & Dongseok Suh. (2022) Charge carrier modulation in graphene on ferroelectric single-crystal substrates. NPG Asia Materials 14:1.
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Eisuke Tokumitsu. (2020) A simple analysis of polarization reversal of ferroelectric capacitor demonstrating negative capacitance-like behavior. Japanese Journal of Applied Physics 59:SC, pages SCCB06.
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Esther Lee, Tae Hyeon Kim, Seung Won Lee, Jee Hoon Kim, Jaeun Kim, Tae Gun Jeong, Ji-Hoon Ahn & Byungjin Cho. (2019) Improved electrical performance of a sol–gel IGZO transistor with high-k Al2O3 gate dielectric achieved by post annealing. Nano Convergence 6:1.
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Shinji Migita, Hiroyuki Ota & Akira Toriumi. (2019) Design points of ferroelectric field-effect transistors for memory and logic applications as investigated by metal-ferroelectric-metal–insulator–semiconductor gate stack structures using Hf 0.5 Zr 0.5 O 2 films . Japanese Journal of Applied Physics 58:SL, pages SLLB06.
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Eisuke Tokumitsu. 2016. Ferroelectric-Gate Field Effect Transistor Memories. Ferroelectric-Gate Field Effect Transistor Memories 75 88 .
Masanori Okuyama. 2016. Ferroelectric-Gate Field Effect Transistor Memories. Ferroelectric-Gate Field Effect Transistor Memories 3 20 .
Daolin Cai, Ping Li, Yahong Zhai, Zhitang Song & Houpeng Chen. (2011) Pb(Zr 0.52 Ti 0.48 )O 3 memory capacitor on Si with a polycrystalline silicon/SiO 2 stacked buffer layer . Journal of Semiconductors 32:9, pages 094007.
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Seong-Moon Cho, Hyo-Jin Nam, Bae Ho Park & Duk-Young Jeon. (2008) Electrostatic force microscopy study on the domain switching properties of the Pb(Zr0.2Ti0.8)O3 thin films with different crystallographic orientations for the probe-based data storage. Ultramicroscopy 108:10, pages 1081-1085.
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Koji Aizawa. (2011) Fabrication and Characterization of Ferroelectric Polymer/TiO 2 /Al-doped ZnO Structures . MRS Proceedings 1071.
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Daolin Cai, Ping Li, Shuren Zhang, Yahong Zhai, Aiwu Ruan, Yangfan Ou, Yanyu Chen & Dongshen Wu. (2007) Fabrication and characteristics of a metal/ferroelectric/polycrystalline silicon/insulator/silicon field effect transistor. Applied Physics Letters 90:15.
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T.P. Juan, C. Chang & J.Y. Lee. (2006) A New Metal–Ferroelectric$(hboxPbZr_0.53hboxTi_0.47hboxO_3)$–Insulator$(hboxDy_2hboxO_3)$–Semiconductor (MFIS) FET for Nonvolatile Memory Applications. IEEE Electron Device Letters 27:4, pages 217-220.
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Chung-Yuan Chang, Trevor Pi-chun Juan & Joseph Ya-min Lee. (2006) Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications. Applied Physics Letters 88:7, pages 072917.
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Y. Fujimori, T. Fujii, T. Suzuki, H. Kimura, T. Fuchikami, T. Nakamura & H. Takasu. (2005) Novel solid-state spatial light modulator on integrated circuits for high-speed application with electro-optic thin film. Novel solid-state spatial light modulator on integrated circuits for high-speed application with electro-optic thin film.
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Hirokazu Saiki & Eisuke Tokumitsu. (2011) Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor (MFMIS) FETs Using (Sr,Sm) 0.8 Bi 2.2 Ta 2 O 9 (SSBT) Thin Films . MRS Proceedings 784.
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Eisuke Tokumitsu & Masahito Kishi. (2011) Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi 2 Ta 2 O 9 Films . MRS Proceedings 748.
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Eisuke Tokumitsu & Masahito Kishi. (2011) Sm Doping Effects on Electrical Properties of Sol-Gel Derived SrBi 2 Ta 2 O 9 Films . MRS Proceedings 747.
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Jong-Gul Yoon & Tae Kwon Song. 2002. Handbook of Thin Films. Handbook of Thin Films 309 367 .
Eisuke Tokumitsu, Takuya Suzuki & Naoki Sugita. (2011) Ferroelectric-Gate Structures and Field-Effect Transistors Using (Bi,La) 4 Ti 3 O 12 Films . MRS Proceedings 688.
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Fengyan Zhang, Sheng Teng Hsu, Hong Ying, D. Evans, S. Ohnishi & Wendong Zhen. (2001) Integration of SBT thin film into MFMOS structure for one transistor memory applications. Integration of SBT thin film into MFMOS structure for one transistor memory applications.
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Eisuke Tokumitsu, Gen Fujii & Hiroshi Ishiwara. (1999) Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures. Applied Physics Letters 75:4, pages 575-577.
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Fengyan Zhang, Sheng Teng Hsu, Tingkai Li, Yoshi Ono, Jer-shen Maa, Hong Ying & Lisa Stecker. (2011) Thermal Stability of Ir/TaN Electrode/Barrier on Thin Gate Oxide for MFMOS one Transistor Memory Application. MRS Proceedings 596.
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Yukio Watanabe. (1998) Theoretical stability of the polarization in insulating ferroelectric/semiconductor structures. Journal of Applied Physics 83:4, pages 2179-2193.
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E Tokumitsu, Y. Takahashi & H. Ishiwara. (2011) Preparation and Characterization of Bi 2 VO 5.5 Films by MOD Method . MRS Proceedings 541.
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